The MRX‑01 is a precision experimental setup designed to study the magnetoresistance effect in semiconductors. Unlike traditional setups for semimetals like bismuth, this system focuses on semiconductor materials (e.g., Germanium or GaAs), whose resistivity changes significantly under varying magnetic fields due to the influence on charge carrier motion.

Using a four-probe configuration, the setup ensures accurate resistance measurement by eliminating contact resistance. The semiconductor sample is placed in a magnetic field (via an electromagnet), and resistance is measured at different field strengths to analyze the dependence of resistivity on magnetic induction. This experiment is critical in understanding mobility, scattering mechanisms, and band structure effects in semiconductors.

Ideal for use in solid-state physics, semiconductor device research, and advanced laboratory training.

    Key Features

• High-quality semiconductor sample (Ge, GaAs, or InSb)

• Accurate four-probe measurement configuration

• Designed for use with electromagnet and digital Gaussmeter

• Plots resistance vs. magnetic field intensity (B)

• Suitable for both educational and research applications

• Compatible with temperature variation studies (optional)

• Helps study anisotropy, mobility, and MR coefficients

   Applications

• Study of magnetoresistance in intrinsic and extrinsic semiconductors

• Analysis of mobility and charge carrier dynamics

• Understanding the effect of magnetic field on transport properties

• Suitable for postgraduate physics and materials science labs

• Research in magneto-transport and semiconductor physics