The MRB‑11 setup is designed for studying the magnetoresistance effect in bismuth, a phenomenon where the electrical resistance of a material changes in response to an applied magnetic field. Bismuth, being a semimetal with high carrier mobility and low carrier density, shows a pronounced magnetoresistive response, making it ideal for such investigations.

This educational and research-grade setup includes a high-purity bismuth sample, four-probe configuration for accurate resistance measurements, and compatibility with a variable electromagnet and digital Gaussmeter. The user can systematically apply magnetic fields and measure the resulting changes in resistance, thereby understanding charge carrier behavior and anisotropic conduction in semimetals.

Perfect for advanced undergraduate, postgraduate, and research-level experiments in solid-state physics and material science.

Key Features

• High-purity bismuth sample with durable mounting

• Accurate four-probe configuration to eliminate contact resistance

• Designed for use with digital Gaussmeters and electromagnets

• Demonstrates strong magnetoresistance behavior

• Enables plotting of resistance vs. magnetic field

• Suitable for quantitative carrier mobility analysis

• Robust construction for repetitive laboratory use

Applications

• Study of magnetoresistive effects in semimetals

• Measurement of carrier mobility and scattering

• Research in condensed matter physics and quantum transport

• Educational tool for solid-state and material science laboratories

• Ideal for understanding field-dependent resistivity