The MRB‑11 setup is designed for precise experimentation on the magnetoresistance effect in bismuth, a semimetal known for its high carrier mobility and strong magnetoresistive response. This apparatus helps students and researchers investigate how the electrical resistance of bismuth changes in the presence of a magnetic field, providing a clear understanding of charge carrier dynamics in semimetals.

The setup consists of a bismuth sample mounted on a base, a four-probe measurement configuration, a digital Gaussmeter, and a variable electromagnet with power supply. By varying the magnetic field and measuring the corresponding voltage/resistance, the user can plot the magnetoresistance curve and analyze its dependence on field strength.

It is ideal for advanced physics labs, material science departments, and semiconductor research environments.

  Key Features

• Study of magnetoresistance behavior in bismuth samples

• Includes four-probe configuration for accurate resistance measurements

• Compatible with digital Gaussmeters and standard electromagnets

• High sensitivity to low and high magnetic field variations

• Enables plotting of resistance vs. magnetic field strength

• Useful in understanding carrier mobility and anisotropic behavior in semimetals

• Designed for use in undergraduate, postgraduate, and research laboratories

   Applications

• Study of semimetals and quantum materials

• Investigation of magnetoresistive effects

• Research in solid-state physics and material science

• Useful for demonstrating carrier scattering and magnetic influence

• Supports academic curricula in condensed matter physics