The MRX‑RMN is a next-generation magnetoresistance experimental setup, purpose-built for high-sensitivity research in solid-state physics and semiconductor materials. This research-grade model features enhanced mechanical stability, improved shielding, and extended sample compatibility for nanostructured materials, thin films, and bulk semiconductors.

Using the trusted four-probe method, MRX‑RMN provides precise resistance measurement as a function of magnetic field, eliminating lead/contact resistance. It is ideal for accurate studies of carrier mobility, Lorentz force effects, and quantum transport phenomena in semiconductors and semimetals (like Bismuth, InSb, or GaAs).

The setup is optimized for integration with high-resolution Gaussmeters, programmable electromagnets, and automated temperature control systems, making it a powerful tool for academic and industrial research labs.

🔧 Key Features

• Precision-engineered four-probe configuration

• Suitable for thin films, nano-materials, and semiconductor crystals

• Extended support for cryogenic and variable-temperature measurements (optional)

• Low-noise measurement system ideal for sensitive MR detection

• Enhanced mechanical design for vibration-free readings

• Compatible with digital Gaussmeters, power supplies, and data logging systems

• Ideal for quantum Hall effect, magnetoresistance ratio, and mobility calculations

🧪 Applications

• Research in magneto-transport properties of nanomaterials and semiconductors

• Study of carrier dynamics and mobility under magnetic fields

• Measurement of longitudinal and transverse magnetoresistance

• Characterization of quantum materials, topological insulators, and 2D materials

• Used in PhD-level research, material development labs, and spintronic device R&D