The MRX‑RM is a high-precision research-grade magnetoresistance setup designed for advanced experimental analysis of semiconductor and semimetal samples under varying magnetic fields. Engineered with accuracy and flexibility in mind, this system allows users to investigate the magnetic field dependence of resistivity in different materials using a four-probe configuration, which ensures precise measurements by minimizing contact resistance.

It supports integration with digital Gaussmeters, programmable power supplies, and high-stability electromagnets, making it suitable for temperature-variable, low-field, or high-field magnetoresistance studies. The MRX‑RM offers extended compatibility with both n-type and p-type semiconductors like GaAs, InSb, or Ge, and metallic systems such as Bismuth.

This model is ideal for academic research laboratories, R&D centers, and postgraduate education focused on magneto-transport phenomena and spintronic applications.

    Key Features

• Research-grade configuration with enhanced stability and sensitivity

• Supports high-resolution four-probe measurements

• Accommodates multiple semiconductor/semimetal samples

• Wide compatibility with digital Gaussmeters, electromagnets, and data logging systems

• Optional temperature control for low-temperature studies

• Enables detailed analysis of carrier mobility, Hall effect, and magnetoresistance ratios

• Built for long-term experimental research and characterization

    Applications

• In-depth research in magnetoresistance and Hall effect

• Investigation of spintronic and magneto-electronic materials

• Study of carrier scattering and mobility in different materials

• Characterization of semiconductors, semimetals, and topological materials

• Ideal for M.Sc., M.Tech, PhD research, and industry R&D