The MRB‑11C is a refined and advanced version of the classic Magnetoresistance Setup in Bismuth, designed for high-precision studies of the variation of electrical resistance in bismuth under applied magnetic fields. This experiment illustrates the magnetoresistance effect, where the resistance of bismuth changes significantly with field strength due to its unique semimetallic properties and high carrier mobility.

The setup includes a high-purity bismuth sample with a four-probe configuration, allowing for accurate voltage and current measurement. An external variable electromagnet and digital Gaussmeter (optional or integrated, depending on configuration) enable users to analyze how resistance evolves with increasing magnetic flux density. The MRB-11C is ideal for research-focused laboratories, offering enhanced measurement sensitivity and thermal stability.

  Key Features

• Advanced four-probe magnetoresistance measurement setup

• High-sensitivity bismuth sample mounted with thermal isolation

• Suitable for both low and high magnetic field studies

• Designed for use with Gaussmeters and programmable power supplies

• Enables plotting of resistance vs. magnetic field for various current levels

• Supports detailed analysis of carrier mobility and anisotropic behavior

• Perfect for university labs and solid-state research facilities

  Applications

• Investigation of magnetoresistive behavior in semimetals

• Educational tool for advanced solid-state physics experiments

• Characterization of electrical transport properties under magnetic fields

• Applied in material science research and quantum materials studies

• Demonstrates practical principles of magneto-transport phenomena