The HEX‑Bi setup is designed to study the Hall Effect in bismuth, a semimetal with high carrier mobility and low carrier density. This experiment provides deeper insight into magneto-transport phenomena and helps determine the Hall coefficient, carrier concentration, and type of majority charge carriers in bismuth.

The setup includes a high-purity bismuth sample, electromagnet with regulated power supply, digital Gaussmeter, and precision voltmeter. By applying a known magnetic field perpendicular to the current-carrying sample, students can accurately measure the transverse Hall voltage and compute essential electronic transport properties.

The system is ideal for advanced undergraduate and postgraduate experiments in condensed matter physics, material science, and solid-state electronics.

🔧 Key Features

• High-purity bismuth sample mounted for easy measurements

• Measurement of Hall voltage under varying magnetic fields

• Digital Gaussmeter for precise field strength monitoring

• Regulated constant current source

• Compact and integrated setup with digital voltmeter

• Determination of Hall coefficient, carrier concentration, and carrier mobility

• Ideal for semimetallic Hall Effect studies

 Applications

• Study of Hall Effect in semimetals

• Determination of electronic properties of bismuth

• Calculation of carrier type and mobility

• Research and educational use in material characterization

• Comparative study between semiconductors and semimetals